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FDD6296/FDU6296
June 2004
FDD6296/FDU6296
30V N-Channel Fast Switching PowerTrench(R) MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
* 50A, 30 V RDS(ON) = 8.8 m @ VGS = 10 V RDS(ON) = 11.3 m @ VGS = 4.5 V
* Low gate charge * Fast switching * High performance trench technology for extremely low RDS(ON)
Applications
* DC/DC converter * Power management
D
D G S
I-PAK (TO-251AA) GDS
G
D-PAK TO-252 (TO-252)
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID
TA=25oC unless otherwise noted
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25C @TA=25C Pulsed
(Note 3) (Note 1a) (Note 1a) (Note 3) (Note 1a) (Note 1b)
Ratings
30 20 50 15 100 52 3.8 1.6 -55 to +175
Units
V A
PD
Power Dissipation
@TC=25C @TA=25C @TA=25C
W
TJ, TSTG
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
2.9 40 96
C/W
Package Marking and Ordering Information
Device Marking FDD6296 FDU6296
(c)2004 Fairchild Semiconductor Corporation
Device FDD6296 FDU2696
Package D-PAK (TO-252) I-PAK (TO-251)
Reel Size 13'' Tube
Tape width 12mm N/A
Quantity 2500 units 75
FDD6296/FDU6296 Rev C(W)
FDD6296/FDU6296
Electrical Characteristics
Symbol
EAS IAS
TA = 25C unless otherwise noted
Parameter
Drain-Source Avalanche Energy Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note 2)
Test Conditions
Single Pulse, VDD = 15 V, ID=15A
Min Typ Max Units
165 15 mJ A
Drain-Source Avalanche Ratings (Note 2)
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS VGS = 0 V, ID = 250 A 30 29 1 100 1 1.7 -0.5 7.5 9.0 9.3 58 1440 400 140 VGS = 15 mV,
(Note 2)
V mV/C A nA
ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 20 V, VGS = 0 V VDS = 0 V
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 13 A VGS = 10 V, ID = 15 A, TJ=125C VDS = 5 V, ID = 15 A VDS = 15 V, f = 1.0 MHz V GS = 0 V,
3
V mV/C
8.8 11.3 15.0
m
gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qg Qgs Qgd IS VSD trr Qrr
S pF pF pF 19 11 46 23 31.5 17 ns ns ns ns nC nC nC nC 3.2 A V nS nC
Dynamic Characteristics
f = 1.0 MHz ID = 1 A, RGEN = 6
1.3 11 6 29 13
Switching Characteristics
VDD = 15 V, VGS = 10 V,
VDS = 15V, ID = 15 A, VGS = 10 V VDS = 15V, ID = 15 A, VGS = 5 V
22.5 12.2 4 3.5
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 3.2 A Voltage Diode Reverse Recovery Time IF = 15 A, Diode Reverse Recovery Charge diF/dt = 100 A/s
(Note 2)
0.74 25 13
1.2
FDD6296/FDU6296 Rev. C(W)
FDD6296/FDU6296
Electrical Characteristics (cont'd)
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) RJA = 40C/W when mounted on a 1in2 pad of 2 oz copper
b) RJA = 96C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. Maximum current is calculated as: current limitation is 21A
PD R DS(ON)
where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V. Package
FDD6296/FDU6296 Rev. C(W)
FDD6296/FDU6296
Typical Characteristics
100 VGS=10V ID , D R A I N C U R R E N T (A) 80 6.0V 60 4.5V 3.5V 4.0V
1.8 R D S ( O N ) , N O R M A L IZE D DRAIN-SOURCE ON-RESISTANCE VGS = 3.5V
1.6 4.0V 4.5V 5.0V 6.0V 1 10V
1.4
40 3.0V
1.2
20
0 0 1 2 VDS, DRAIN-SOURCE VOLTAGE (V) 3 4
0.8 0 20 40 60 80 100 ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage
0.025 R D S ( O N ) , ON-RESISTANCE (OHM)
1.8 R D S ( O N ) , NORMALIZED D R A IN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100
o
ID = 50A VGS = 10V
ID = 25A 0.02
0.015 TA = 125 C 0.01 TA = 25 C 0.005
o o
125
150
175
2
4
6 VGS, GATE TO SOURCE VOLTAGE (V)
8
10
T J, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature
90 VDS = 10V ID , D R A I N C U R R E N T (A)
IS , R E V E R S E D R A I N C U R R E N T ( A ) 1000 100 10 1
Figure 4. On-Resistance Variation with Gate-to-Source Voltage
VGS = 0V
60
TA = 125 C 25 C 0.1 0.01 -55 C
o o
o
TA =125 C 30 -55 C
o
o
25 C 0 1.5 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V)
o
0.001
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature
FDD6296/FDU6296 Rev. C(W)
FDD6296/FDU6296
Typical Characteristics
10 V GS , GATE-SOURCE VOLTAGE (V) ID = 15A 8 VDS = 10V C A P A C ITA N C E (pF)
1800 f = 1MHz VGS = 0 V Ciss
1200
6 20V 4
15V
600 Crss 0
Coss
2
0 0 5 10 15 20 25 Qg, GATE CHARGE (nC)
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
1000 P (pk), P E A K T R A N S I E N T P O W E R ( W ) RDS(ON) LIMIT ID , D R A I N C U R R E N T ( A ) 100 100s 1ms 10ms 100ms 1s VGS = 10V SINGLE PULSE 0.1 RJA = 96 C/W TA = 25 C 0.01 0.01 0.1 1 VDS, DRAIN-SOURCE VOLTAGE (V) 10 100
o o
Figure 8. Capacitance Characteristics
100 SINGLE PULSE RJA = 96C/W TA = 25C 60
80
10 10s DC
1
40
20
0 0.01 0.1 1 t1, TIME (sec) 10 100 1000
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power Dissipation
1
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2
RJA(t) = r(t) * RJA RJA = 96 C/W
0.1
0.1 0.05 0.02 0.0
P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
0.001 0.001
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDD6296/FDU6296 Rev. C(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I11

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